| 摘要 |
A method for forming a continuous ultra-thin copper layer using a low thermal budget comprises providing a substrate in a reactor, establishing a low first temperature at a surface of the substrate, introducing a copper precursor flow into the reactor to deposit the copper precursor onto the surface, introducing an inert gas flow into the reactor after the copper precursor flow, increasing the temperature at the surface of the substrate to a second temperature during the inert gas flow, and performing a chemical vapor deposition process at the second temperature to deposit a copper layer on the substrate.
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