发明名称 |
Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
摘要 |
A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow-through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.
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申请公布号 |
US2008178805(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20070998468 |
申请日期 |
2007.11.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
PATERSON ALEXANDER M.;HOLLAND JOHN P.;PANAGOPOULOS THEODOROS;HAMMOND EDWARD P.;HATCHER BRIAN K.;TODOROW VALENTIN N.;KATZ DAN |
分类号 |
C23C16/513 |
主分类号 |
C23C16/513 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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