发明名称 |
Method for reading a memory array with a non-volatile memory structure |
摘要 |
A method for reading a memory array is disclosed. The method includes turning on the column of select gates; preprogramming a first right floating gate to a high threshold and a first left floating gate coupled to a same first word line as the first right floating gate to a low threshold; charging a voltage of the right data line to a first predetermined value; charging a voltage of the first word line to a second predetermined value which is between the high threshold of the first right floating gate and the low threshold of the first left floating gate; charging a voltage of a second word line coupled to a second right floating gate to a third predetermined value; and comparing a current of the left data line with a fourth predetermined value.
|
申请公布号 |
US2008181013(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20070669169 |
申请日期 |
2007.01.31 |
申请人 |
CHOU MING-HUNG;SHONE FUJA |
发明人 |
CHOU MING-HUNG;SHONE FUJA |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|