| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aluminum heated substrate support suitable for use in high temperature semiconductor processing systems and method of manufacturing the same. <P>SOLUTION: In one embodiment, the aluminum heated substrate support can include an aluminum body, a stem coupled to the body and a heating element disposed within the body. The body has an average grain size of less than about 250μm. In some embodiments, a joint between the stem and the body is a fully penetrated lap weld that promotes the service life of the substrate support. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
