发明名称 |
CMOS image sensor having transistor with conduction band offset |
摘要 |
An image sensor includes a photo sensitive device and at lest one transistor such as a drive transistor for converting charge accumulated by the photo sensitive device into an electrical signal. That at least one transistor includes a channel region comprised of a plurality of differently doped regions that generates a conduction band offset in the channel region. Such a conductive band offset increases electron mobility in the channel region for minimizing charge trapping at an interface between a gate dielectric and the semiconductor substrate for minimizing flicker noise.
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申请公布号 |
US2008179625(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20070985016 |
申请日期 |
2007.11.13 |
申请人 |
LEE KYUNG-HO;KIM YI-TAE;AHN JUNG-CHAK |
发明人 |
LEE KYUNG-HO;KIM YI-TAE;AHN JUNG-CHAK |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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