发明名称 CARBON NANOTUBE FIELD EFFECT TRANSISTOR
摘要 A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.
申请公布号 WO2008091273(A2) 申请公布日期 2008.07.31
申请号 WO2007US13522 申请日期 2007.06.08
申请人 NORTHROP GRUMMAN SYSTEMS CORPORATION;PESETSKI, AARON, ANTHONY;ZHANG, HONG;ADAM, JOHN, DOUGLAS;PRZYBYSZ, JOHN;MURDUCK, JIM;GOLDSTEIN, NORMAN;BAUMGARDNER, JAMES 发明人 PESETSKI, AARON, ANTHONY;ZHANG, HONG;ADAM, JOHN, DOUGLAS;PRZYBYSZ, JOHN;MURDUCK, JIM;GOLDSTEIN, NORMAN;BAUMGARDNER, JAMES
分类号 H01L51/00 主分类号 H01L51/00
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