| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and a method for forming it. SOLUTION: In the semiconductor element wherein a channel region is formed perpendicular to an active pattern side wall and the method for forming it, the semiconductor element includes a first active pattern, a second active pattern and a gate. The first active pattern is provided on a substrate, and has non-uniform cross-sectional areas. The second active pattern is provided on the first active pattern, and has a pillar shape. The gate is provided while surrounding the second active pattern so that a channel is formed through the second active pattern. COPYRIGHT: (C)2008,JPO&INPIT
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