ION BEAM APPARATUS AND METHOD FOR ION IMPLANTATION

摘要

A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.