发明名称 SUBSTRATE TREATMENT DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment device and a method capable of minimizing a difference in density between plasma and gas caused by to the spatial imbalance of a space in a treatment chamber. SOLUTION: The device provides a treatment space for performing treatment for a substrate, and comprises a treatment chamber having an entrance for putting the substrate into the chamber and taking it out therefrom and a gate valve on one side for opening and closing the entrance; a substrate supporting member provided in the treatment chamber for holding the substrate inputted through the entrance; and a gas distribution plate provided on the upper side of the treatment chamber for distributing plasma and treatment gas in the treatment chamber. The gas distribution plate includes a plurality of unsymmetrically-formed gas jetting flow passages. It is possible to uniformly process the substrate by providing uniform plasma density to the space in the treatment chamber having spatial imbalance. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008177568(A) 申请公布日期 2008.07.31
申请号 JP20080005913 申请日期 2008.01.15
申请人 PSK INC 发明人 BAIK IN HYECK
分类号 H01L21/3065 主分类号 H01L21/3065
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