SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of smoothly discharging holes generated during the operation of a semiconductor device utilizing a nitride semiconductor. SOLUTION: The semiconductor device 1 has a p-type gallium nitride region 16 of gallium nitride which has a high dislocation density region 18 and a low dislocation density region 19. In a plane view of a semiconductor device 2, a switching structure is formed in a range wherein the low dislocation density region 19 exists. The semiconductor device 2 is further provided with a body electrode 20 brought into contact with the p-type gallium nitride region 16. The body electrode 20 is brought into contact with the high dislocation density region 18. COPYRIGHT: (C)2008,JPO&INPIT