PROCESS FOR FABRICATING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND DELAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor element having nondoped polysilicon which can be easily retested, and to provide a semiconductor element and a delay device. SOLUTION: An LDD portion is formed before forming the gate region of a transistor. Since the LDD portion is formed earlier, introduction of impurities to the gate region can be prevented under a state where the gate region and the LDD portion are overlapped. Since the impurities do not intrude into the gate region when the LDD portion is formed, diffusion of impurities into the gate region can be prevented even if high speed diffusion arises. COPYRIGHT: (C)2008,JPO&INPIT