发明名称 METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method forfacilitating a micro thin-film processing while reducing the number of times of photoresists. SOLUTION: A first layer and a light absorbing second layer formed on a substrate are selectively irradiated with a laser beam to remove a part of the light absorbing layer; the exposed part of the first layer is removed by etching using the light absorbing layer as a mask; a layer to be a mask is formed on a part of the second layer by a liquid drop discharging method to cover at least the removed part of the first layer and the second layer; and the first and second layers are etched by using the layer to be a mask as a mask. As the thin film processing is carried out by selecting a method appropriate to the given place, the throughput of the process is improved. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008176095(A) 申请公布日期 2008.07.31
申请号 JP20070009926 申请日期 2007.01.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SHOJI HIRONOBU;MORISUE MASAFUMI;JINBO YASUHIRO;MIYAIRI HIDEKAZU
分类号 G09F9/00;G09F9/30;H01L21/336;H01L29/417;H01L29/786 主分类号 G09F9/00
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