| 摘要 |
In some embodiments a method of forming a gold-aluminum electrical interconnect is described. The method may include interposing a diffusion retardant layer between the gold and the aluminum ( 1002 ), the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum ( 1004 ); forming alloys of gold and the diffusion retardant material in regions containing the material ( 1006 ) and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material ( 1008 ); and forming a continuous electrically conducting path between the aluminum and the gold ( 1010 ). In some embodiments, a structure useful in a gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad ( 530 ) and a diffusion retardant layer ( 520 ) in contact with the bond pad, the diffusion retardant layer including regions ( 522 ) containing and regions ( 524 ) substantially devoid of a diffusion retardant material. The structure may include a gold free air ball ( 714 ) in contact with the diffusion retardant layer.
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