| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer for an AlGaInP-based light-emitting diode and its manufacturing method which makes it possible to simply suppress the total reflection of light in the surface of a GaP current dispersion layer. <P>SOLUTION: The epitaxial wafer for an AlGaInP-based light-emitting diode has, on a substrate 1, a light-emitting layer 6 including at least an n-type(Al<SB>x1</SB>Ga<SB>1-x1</SB>)<SB>y1</SB>In<SB>1-y1</SB>P clad layer 2, an (Al<SB>x2</SB>Ga<SB>1-x2</SB>)<SB>y2</SB>In<SB>1-y2</SB>P active layer 3, and a p-type (Al<SB>x3</SB>Ga<SB>1-x3</SB>)<SB>y3</SB>In<SB>1-y3</SB>P clad layer 4, and a p-type GaP current dispersion layer 5, wherein at least in the vicinity of the surface 51 of the p-type GaP current dispersion layer 5, p-type impurities of more than a predetermined concentration, which serve as a rough crystal growth surface, are added, and the surface 51 of the GaP current dispersion layer 5 becomes a rough surface. <P>COPYRIGHT: (C)2008,JPO&INPIT |
