发明名称 METHOD FOR FABRICATING PHOTOMASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for fabricating a photomask with high drawing throughput by using a charged beam drawing device. <P>SOLUTION: The method for fabricating the photomask includes steps of: (S101) obtaining a first relation between an irradiation charge amount and the dimensional accuracy of a photomask pattern; (S102) determining the irradiation charge amount from the given dimensional accuracy based on the first relation; (S103) selecting a resist where a resist pattern in a desired dimension is formed with the irradiation charge amount based on the determined irradiation charge amount; (S104) obtaining a second relation between the drawing conditions of the charged beam drawing device and a drawing time necessary to draw an image with the irradiation charge amount on the selected resist in each drawing pattern; and (S105) determining the drawing conditions in each drawing pattern based on given conditions for the drawing time and the second relation. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008175959(A) 申请公布日期 2008.07.31
申请号 JP20070008085 申请日期 2007.01.17
申请人 TOSHIBA CORP 发明人 SAITO MASATO
分类号 G03F1/68;G03F1/78;H01L21/027 主分类号 G03F1/68
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