发明名称 |
METHOD FOR FABRICATING PHOTOMASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating a photomask with high drawing throughput by using a charged beam drawing device. <P>SOLUTION: The method for fabricating the photomask includes steps of: (S101) obtaining a first relation between an irradiation charge amount and the dimensional accuracy of a photomask pattern; (S102) determining the irradiation charge amount from the given dimensional accuracy based on the first relation; (S103) selecting a resist where a resist pattern in a desired dimension is formed with the irradiation charge amount based on the determined irradiation charge amount; (S104) obtaining a second relation between the drawing conditions of the charged beam drawing device and a drawing time necessary to draw an image with the irradiation charge amount on the selected resist in each drawing pattern; and (S105) determining the drawing conditions in each drawing pattern based on given conditions for the drawing time and the second relation. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008175959(A) |
申请公布日期 |
2008.07.31 |
申请号 |
JP20070008085 |
申请日期 |
2007.01.17 |
申请人 |
TOSHIBA CORP |
发明人 |
SAITO MASATO |
分类号 |
G03F1/68;G03F1/78;H01L21/027 |
主分类号 |
G03F1/68 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|