SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of crystal failure in a diffused layer after laser light is given for laser trimming without dropping the degree of integration of an element subject to laser trimming, and to suppress leakage current at a PN junction. SOLUTION: A diffused layer 6 as an electrode lead-out part of an aluminum fuse 1 is directly covered with a protective film 9. The protective film 9 is made of doped polysilicon. COPYRIGHT: (C)2008,JPO&INPIT