发明名称 STORAGE ELEMENT AND MEMORY
摘要 A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.
申请公布号 US2008180992(A1) 申请公布日期 2008.07.31
申请号 US20080013895 申请日期 2008.01.14
申请人 SONY CORPORATION 发明人 YAMANE KAZUTAKA;IKARASHI MINORU;HOSOMI MASANORI;OHMORI HIROYUKI;YAMAMOTO TETSUYA;HIGO YUTAKA;OISHI YUKI;KANO HIROSHI
分类号 G11C11/14 主分类号 G11C11/14
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