Methods of Forming Pad Structures and Related Methods of Manufacturing Recessed Channel Transistors that Include Such Pad Structures

摘要

Methods of forming pad structures are provided in which a first contact region and second contact regions are formed in an active region of a substrate. An insulating interlayer is formed on the substrate. The insulating interlayer has a first opening that exposes the first contact region and the second contact regions. First conductive pads are formed in the first opening. Each first conductive pad is in electrical contact with a respective one of the second contact regions. Spacers are formed, where each spacer is on a sidewall of a respective one of the first conductive pads. Finally, a second conductive pad is formed between the first conductive pads and in electrical contact with the first contact region to complete the pad structure.