NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR PACKAGE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

摘要

Disclosed is a nitride semiconductor device comprising a nitride semiconductor laminated structure which includes an n-type first layer, a second layer arranged on the first layer and containing a p-type impurity and an n-type third layer arrange on the second layer, each of which layers is composed of a group III nitride semiconductor. The nitride semiconductor laminated structure also has a wall surface extending over the first, second and third layers. The nitride semiconductor device further comprises a forth layer formed on the wall surface of the second layer and having a conductivity type different from that of the second layer, a gate insulating film formed in contact with the fourth layer, and a gate electrode so formed as to face the fourth layer through the gate insulating film.