A memory device, an information storage process, a process, and a structured material

摘要

A memory device has a plurality of memory cells for storing information. The memory cells including respective regions of a semiconductor. Information is stored in the regions as a corresponding arrangement of at least two measurably distinct phases of the semiconductor in the regions by applying pressure to and removing pressure from at least a subset of the regions to induce one or more phase transformations in those regions. A property of the plurality of regions is measured to determine the information stored in the regions. The property includes conductivity or resistance. Applying of pressure to and removing pressure from each region includes transforming the region from at least one first phase to at least one second phase. At least one of the first phase includes an amorphous phase and the at least one second phase includes at least one crystalline phase. The amorphous phase is a relaxed amorphous phase. At least one first phase includes at least one crystalline phase, and the at least one second phase includes an amorphous phase.