| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical semiconductor electronic device which can suppress occurrence of punch-through and can suppress increase of an ON resistance. <P>SOLUTION: First and second semiconductor parts 15b, 15c of a GaN-based semiconductor region 15 are positioned on first and second areas 13b, 13c of a conductive carrier substrate 13 respectively. A GaN-based semiconductor region 17 is positioned on the first semiconductor part 15b, and a GaN-based semiconductor region 19 is positioned on the second semiconductor part 15c. A GaN-based semiconductor region 21 is provided on the GaN-based semiconductor regions 17, 19. The GaN-based semiconductor region 17 forms a hetero-junction 25 in the first semiconductor part 15b of the GaN-based semiconductor region 15 as a two-dimensional inversion layer 23. The GaN-based semiconductor region 13 is electrically connected to the GaN-based semiconductor region 21 via the GaN-based semiconductor region 19. <P>COPYRIGHT: (C)2008,JPO&INPIT |
