| 摘要 |
<P>PROBLEM TO BE SOLVED: To carry out patterning of a thin-film easily at high precision. <P>SOLUTION: A manufacturing method for a thin-film transistor includes a step of forming a gate electrode 2 on a transparent substrate 1, a step of forming a first semiconductor layer 4 and a second semiconductor layer 5 that cover at least part of the gate electrode 2, a step of applying photoresist 6 to the first and second semiconductor layers 4 and 5, and a step of exposing the photoresist 6 to light. The transparent substrate 1, first second semiconductor layers 4, and second semiconductor layer 5 each have a property transmitting near-infrared rays, and the gate electrode 2 has a property not transmitting near-infrared rays. At the step of exposing the photoresist 6 to light, light is emitted toward the photoresist 6 from the surface of transparent substrate 1 that is opposite to the surface where the first and second semiconductor layers 4 and 5 are formed. This enables easy and highly precise patterning of the first and second semiconductor layers 4 and 5. <P>COPYRIGHT: (C)2008,JPO&INPIT |
