| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode with a low on-state forward voltage and reduced parasitic resistance. SOLUTION: A manufacturing method of the diode begins by depositing an Al<SB>x</SB>Ga<SB>1-x</SB>N nucleation layer on a SiC substrate, then an n+GaN buffer layer, an n-GaN layer, an Al<SB>x</SB>Ga<SB>1-x</SB>N barrier layer, and an SiO<SB>2</SB>dielectric layer are deposited. A portion of the dielectric layer is removed, and a Schottky metal is deposited in its void. The dielectric layer is affixed to a support layer with a metal bonding layer using an Au-Sn eutectic wafer bonding process, the substrate is removed using reactive ion etching to expose an n+ layer, selected portions of the n+, an n-, and the barrier layers are removed to form a mesa type diode structure covering the Schottky metal, on the dielectric layer, and an ohmic contact is deposited on the n+ layer. COPYRIGHT: (C)2008,JPO&INPIT |
