| 摘要 |
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101 , and a first metal layer 102 and a second metal layer 103 sequentially stacked in this order on the semiconductor film 101 , characterized in that the first metal film 102 is formed of Al, and the second metal film 103 is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.
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