发明名称 |
Non-polar and semi-polar light emitting devices |
摘要 |
An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
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申请公布号 |
US2008179607(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20070001227 |
申请日期 |
2007.12.11 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
DENBAARS STEVEN P.;SCHMIDT MATHEW C.;KIM KWANG CHOONG;SPECK JAMES S.;NAKAMURA SHUJI |
分类号 |
H01L21/00;H01L33/06;H01L33/22;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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