发明名称 |
MEMORY HAVING A VERTICAL ACCESS DEVICE |
摘要 |
<p>Semiconductor memory devices having vertical access devices are disclosed. In some embodiments, a method of forming the device includes providing a recess in a semiconductor substrate that includes a pair of opposed side walls and a floor extending between the opposed side walls. A dielectric layer may be deposited on the side walls and the floor of the recess. A conductive film may be formed on the dielectric layer and processed to selectively remove the film from the floor of the recess and to remove at least a portion of the conductive film from the opposed sidewalls.</p> |
申请公布号 |
WO2008091579(A2) |
申请公布日期 |
2008.07.31 |
申请号 |
WO2008US00785 |
申请日期 |
2008.01.22 |
申请人 |
MICRON TECHNOLOGY, INC.;JUENGLING, WERNER |
发明人 |
JUENGLING, WERNER |
分类号 |
H01L21/8242;H01L21/336;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|