PROCESS FOR PRODUCING SEMICONDUCTOR MEMORY DEVICE

摘要

In the step of forming an InGeSbTe film by doping GeSbTe composed of germanium (Ge), antimony (Sb) and tellurium (Te) as a base material with indium (In), while maintaining the temperature of a semiconductor substrate at a temperature between the in-situ crystallization temperature of the base material GeSbTe and the in-situ crystallization temperature of InGeSbTe, the InGeSbTe film is formed by sputtering on the semiconductor substrate. Consequently, any problem of occurrence of phase separation within the InGeSbTe film during the subsequent production processing can be inhibited.