MULTILAYER STRUCTURE HAVING HIGH SPIN INJECTION RATIO USING CONDUCTIVE NITRIDE AS A SPACER AND THE FABRICATION METHOD THEREOF

摘要

A multilayered structure having high spin injection efficiency using a conductive nitride as a spacer layer is provided to obtain spin injection efficiency of a high level only by correcting conventional equipment without fabricating additional equipment. A spacer layer(2) is formed on a semiconductor layer(3), made of a conductive nitride. A spin injection electrode layer(1) is formed on the conductive nitride spacer layer, made of a ferroelectric material and injecting spin to the semiconductor layer through the conductive nitride spacer layer. Transition metal can be doped into the conductive nitride spacer layer. The interface of the semiconductor layer and the conductive nitride spacer layer can be made of an ohmic contact.