| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving element excellent in conversion efficiency which can obtain sufficient output voltage and power by efficiently converting light into voltage or power. <P>SOLUTION: The semiconductor light-receiving element has a structure in which a photoelectric conversion layer for absorbing light to generate photovoltaic power is composed of a layer structure alternately provided with a doping dipole structure formed by adjacently or closely disposing an n-type semiconductor layer and a p-type semiconductor layer, and a light absorbing layer for depleting at the time of operation and absorbing light to generate optical carriers. The light absorbing layer has a structure in which its layer thickness is so set as to be gradually thick as it becomes far from a light incident side in accordance with the optical attenuation quantity and the number of generated optical carriers in the light absorbing layer is the same in any light absorbing layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
