发明名称 STRONTIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS
摘要 A PROCESS FOR PREPARING STRONTIUM DOPED MOLTEN SILICON FOR USE IN A SINGLE SILICON CRYSTAL GROWING PROCESS IS DISCLOSED. POLYSILICON IS DOPED WITH STRONTIUM AND MELTED IN A SILICA CRUCIBLE (10).DURING MELTING AND THROUGHOUT THE CRYSTAL GROWING PROCESS THE STRONTIUM ACTS AS A DEVITRIFICATION PROMOTER (24) AND CREATES A LAYER OF DEVITRIFIED SILICA ON THE INSIDE CRUCIBLE SURFACE (16, 18) IN CONTACT WITH THE MELT RESULTING IN A LOWER LEVEL OF CONTAMINANTS IN THE MELT AND GROWN CRYSTAL.(FIG 2)
申请公布号 MY136021(A) 申请公布日期 2008.07.31
申请号 MY2000PI01000 申请日期 2000.03.14
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 RICHARD J. PHILLIPS;STEVEN J. KELTNER;JOHN D. HOLDER
分类号 C30B29/06;C30B15/00;C30B15/10 主分类号 C30B29/06
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