发明名称 |
STRONTIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS |
摘要 |
A PROCESS FOR PREPARING STRONTIUM DOPED MOLTEN SILICON FOR USE IN A SINGLE SILICON CRYSTAL GROWING PROCESS IS DISCLOSED. POLYSILICON IS DOPED WITH STRONTIUM AND MELTED IN A SILICA CRUCIBLE (10).DURING MELTING AND THROUGHOUT THE CRYSTAL GROWING PROCESS THE STRONTIUM ACTS AS A DEVITRIFICATION PROMOTER (24) AND CREATES A LAYER OF DEVITRIFIED SILICA ON THE INSIDE CRUCIBLE SURFACE (16, 18) IN CONTACT WITH THE MELT RESULTING IN A LOWER LEVEL OF CONTAMINANTS IN THE MELT AND GROWN CRYSTAL.(FIG 2) |
申请公布号 |
MY136021(A) |
申请公布日期 |
2008.07.31 |
申请号 |
MY2000PI01000 |
申请日期 |
2000.03.14 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
RICHARD J. PHILLIPS;STEVEN J. KELTNER;JOHN D. HOLDER |
分类号 |
C30B29/06;C30B15/00;C30B15/10 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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