| 摘要 |
Methods for forming passivated stoichiometric metal nitride films are provided along with structures incorporating such films. The preferred methods include contacting a substrate with alternating and sequential pulses of a metal source chemical, one or more plasma-excited species of hydrogen and a nitrogen source chemical to form a stoichiometric metal nitride film, followed by exposure of the stoichiometric metal nitride film to a source chemical of a passivating species to form a passivation layer over the stoichiometric metal nitride film.
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