| 摘要 |
A quartz crucible which stores a silicon melt is rotated at a predetermined rotation speed, and a silicon single crystal ingot pulled from the melt is rotated at a predetermined rotation speed. A first coil and a second coil are installed with a predetermined spacing in between such that a center of each of the coils corresponds to a rotation center of the crucible. A magnetic field is generated by energizing electric currents in the first and second coils in the same direction. The first coil is installed outside the chamber and the second coil is installed inside the chamber. A center position of the predetermined spacing between the first coil and the second coil is controlled at the same or a lower level as the surface of the silicon melt such that a distance of the center position from the surface of the silicon melt is 0 mm or more and 10000 mm or less. |
