| 摘要 |
PROBLEM TO BE SOLVED: To provide a chip carrier and a semiconductor device in which high bonding reliability can be attained, after mounting of an IC chip by isolating a wiring layer and a bump-forming side of the chip carrier. SOLUTION: A chip carrier 10 is obtained by forming bumps 21 comprising electrode pads 16 and junction constituted of a brazing filler metal 15 on one side of an insulating substrate 13, and forming a multilayer interconnection comprising wiring layers 17 and 19 on the other sides. Furthermore, pads for an IC chip and the bumps 21 of the chip carrier substrate are bonded, and are solder flip-chip mounted and a semiconductor device is obtained. COPYRIGHT: (C)2008,JPO&INPIT
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