| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for processing an end of an external semiconductor layer which forms an ideally tapered shape by the use of a convenient means, without inducing peelings, and steps at the end of the external semiconductor layer. <P>SOLUTION: The first tapered shape T1 is formed at a location as the end of the external semiconductor layer 13 and is raised smoothly from an exposed surface of an insulating layer 15 by slot milling without the steps. The external semiconductor layer 13 is peeled from the position of the exposed insulating layer 15 to a tip of a cable. The second tapered shape T2 is formed at the end of the external semiconductor 13, by tapering and cutting a shoulder at the end of the external semiconductor layer 13 so as to leave only the tip of the first tapered shape T1, and has axis line which is longer, in other words, with a gentler slope than the first tapered shape. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
