METHOD OF EVALUATING SOI TRANSISTOR AND EVALUATION APPARATUS FOR SOI TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an evaluation method which allows a precise measurement of the effective parasitic capacity when SOI-MOSFET is operated on AC, a quality evaluation method for an SOI substrate after MOSFET formation, and an evaluation apparatus for these methods. SOLUTION: An AC signal is superimposed on the gate bias of the SOI-MOSFET, and the effective parasitic capacity is measured from the response of drain current using a lock-in amplifier. By measuring the effective parasitic capacity under different conditions of the back gate bias and the sample temperature of the SOI-MOSFET and then comparing the measurement results, the quality of the interface between an SOI layer and a buried oxide film (BOX layer) can be evaluated. COPYRIGHT: (C)2008,JPO&INPIT