BIPOLAR TYPE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a bipolar type semiconductor element that can suppress an increase in forward voltage. SOLUTION: A pin diode 70 is provided with an n-type 4H type SiC substrate 21 and a drift layer 23 formed thereon. The drift layer 23 is 1×1013cm-3in donor density and 200μm in film thickness. A differenceΔVf of forward voltage between forward current-voltage characteristic K1 immediate after start of conduction and that K2 in one hour at forward current density of 100 A/cm2is 0.1 V or less, showing almost no difference. COPYRIGHT: (C)2008,JPO&INPIT