| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element, a driving method thereof and an imaging apparatus, ensuring the capacitance of signal charges transferred on a vertical charge transfer path even if an imaging region is small. SOLUTION: The solid-state imaging element comprises a plurality of photoelectric conversion parts 101 arranged in a row direction and a column direction perpendicular thereto on a semiconductor substrate, a VCCD which transfers signal charges generated at a photoelectric conversion part 101 in the column direction, and an HCCD which transfers signal charges from the VCCD in the row direction. The VCCD comprises a plurality of vertical charge transfer electrodes V1-V6 arranged in the column direction between the photoelectric conversion parts 101, and a charge reading region which reads the signal charges generated at the photoelectric conversion part 101 into the both VCCD, adjacent to the photoelectric conversion part 101. COPYRIGHT: (C)2008,JPO&INPIT |
