| 摘要 |
A method for manufacturing a semiconductor device, comprises: (a) forming a first semiconductor layer on a semiconductor substrate in a first region and forming a second semiconductor layer on the semiconductor substrate in a second region, a thickness of the first semiconductor layer being larger than a thickness of the second semiconductor layer; (b) forming a third semiconductor layer on the first semiconductor layer and the second semiconductor layer; (c) forming a first cavity between the third semiconductor layer and the semiconductor substrate in the first region, and a second cavity between the third semiconductor layer and the semiconductor substrate in the second region by removing the first semiconductor layer and the second semiconductor layer, the first cavity and the second cavity having an internal height different each other; (d) forming an insulation layer inside the first cavity and the second cavity so that the first cavity remains a third cavity defined by the insulation layer formed both sides thereof, and the second cavity is filled with the insulation layer; and (e) filling the third cavity with an electrode material.
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