| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of loading effects without changing an introduction flow rate of oxygen-containing gas and hydrogen-containing gas in each case according to the number of substrates and a substrate surface structure when simultaneously processing a plurality of substrates. SOLUTION: A semiconductor device manufacturing method has a step for carrying substrates into a processing chamber, a step for subjecting the substrates to oxidation processing by supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber, and a step for carrying out the substrates from the processing chamber after oxidation processing. In the step for subjecting the substrates to oxidation processing, the following one cycle is repeated several times. The one cycle includes a step for sealing the inside of the processing chamber after reducing pressure inside the processing chamber lower than atmospheric pressure by evacuating the inside of the processing chamber, a step for sealing the inside of the processing chamber again after supplying a prescribed amount of oxygen-containing gas and a prescribed amount of hydrogen-containing gas into the sealed processing chamber, and a step for oxidizing the substrates while maintaining the state. COPYRIGHT: (C)2008,JPO&INPIT |
