发明名称 PLASMA REACTOR WITH WIDE PROCESS WINDOW EMPLOYING PLURAL VHF SOURCES
摘要 A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
申请公布号 US2008179011(A1) 申请公布日期 2008.07.31
申请号 US20070734040 申请日期 2007.04.11
申请人 COLLINS KENNETH S;HANAWA HIROJI;RAMASWAMY KARTIK;BUCHBERGER DOUGLAS A;RAUF SHAHID;BERA KALLOL;WONG LAWRENCE;MERRY WALTER R;MILLER MATTHEW L;SHANNON STEVEN C;NGUYEN ANDREW;CRUSE JAMES P;CARDUCCI JAMES;DETRICK TROY S;DESHMUKH SUBHASH;SUN JENNIFER Y 发明人 COLLINS KENNETH S.;HANAWA HIROJI;RAMASWAMY KARTIK;BUCHBERGER DOUGLAS A.;RAUF SHAHID;BERA KALLOL;WONG LAWRENCE;MERRY WALTER R.;MILLER MATTHEW L.;SHANNON STEVEN C.;NGUYEN ANDREW;CRUSE JAMES P.;CARDUCCI JAMES;DETRICK TROY S.;DESHMUKH SUBHASH;SUN JENNIFER Y.
分类号 C23F1/00;C23C16/00 主分类号 C23F1/00
代理机构 代理人
主权项
地址