发明名称 |
Impurity Introducing Method, Impurity Introducing Apparatus, and Electronic Device Produced by Using Those |
摘要 |
A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature. Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized. An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.
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申请公布号 |
US2008182348(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20040572144 |
申请日期 |
2004.09.22 |
申请人 |
JIN CHENG-GUO;SASAKI YUICHIRO;MIZUNO BUNJI |
发明人 |
JIN CHENG-GUO;SASAKI YUICHIRO;MIZUNO BUNJI |
分类号 |
G01R31/26;H01L21/26;H01L21/265;H01L21/324 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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