NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A nitride semiconductor light emitting device includes: a dielectric layered film over a substrate, the dielectric layered film being formed by stacking a plurality of dielectric films having different compositions; a semiconductor thin film formed of a single crystal over the dielectric layered film; and a pn junction diode structure over the semiconductor thin film, the pn junction diode structure being formed of a nitride semiconductor.