发明名称 |
Strained MOS devices using source/drain epitaxy |
摘要 |
NMOS and PMOS device structures with separately strained channel regions and methods of their fabrication are disclosed. The source and the drain of the NMOS device is epitaxially grown of a material which causes a shift in the strain of the NMOS device channel in the tensile direction. While, the source and the drain of the PMOS device is epitaxially grown of a material which causes a shift in the strain of the PMOS device channel in the compressive direction.
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申请公布号 |
US2008179627(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20070669902 |
申请日期 |
2007.01.31 |
申请人 |
IEONG MEIKEI;LIU XIAO HU;OUYANG QIQING CHRISTINE;PANDA SIDDHARTHA;YIN HAIZHOU |
发明人 |
IEONG MEIKEI;LIU XIAO HU;OUYANG QIQING CHRISTINE;PANDA SIDDHARTHA;YIN HAIZHOU |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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