LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a light-emitting device having a structure wherein a transparent conductive semiconductor substrate (70) is directly bonded to one major surface of a main compound semiconductor layer (50) composed of a group III-V compound semiconductor and having a light-emitting portion (24). The alkali metal atom concentration at the bonding interface between the main compound semiconductor layer (50) and the transparent conductive semiconductor substrate (70) is adjusted to be not less than 1 OE10<SUP>14</SUP> atoms/cm<SUP>2</SUP> but not more than 2 OE10<SUP>15</SUP> atoms/cm<SUP>2</SUP>. Consequently, this light-emitting device is sufficiently reduced in the interface resistance between the light-emitting portion and the transparent conductive semiconductor substrate.