| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the bonding reliability of a bonding part of a Ni or Cu electrode of the semiconductor device and a bonding material where metallic particles are used as a base resin of bonding, and to provide a manufacturing method of the semiconductor device. <P>SOLUTION: The semiconductor device 101 is provided with a structure where a semiconductor element 101 and the Cu or Ni electrode are connected through a bonding layer 105 constituted of Ag, Cu or Au, and the bonding layer 105 and the Cu or Ni electrode are diffused from / bonded to each other. Bonding is performed in a reducing atmosphere by a bonding material comprising metal oxide particles whose mean particle diameter is 1 nm to 50 μm and a reducing agent composed of an organic substance. Thus, superior bonding strength to the Ni or Cu electrode can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT |
