| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage element which is capable of recording information stably in a small amount of current. SOLUTION: A storage element 1 has a storage layer 3 for holding information depending on a magnetized state of a magnetic material, and a magnetization fixing layer 2 where a magnetizing orientation is fixed to the storage layer 3 via a tunnel insulating layer 15. Flow of a current Iz in the direction of a layer stack changes a magnetizing orientation of the storage layer 3, thereby recording information onto the storage layer 3. Within the magnetization fixing layer 2, many magnetization regions 21 are formed with magnetization components in their lamination directions as well as magnetization intensities M21a and M21b different with each other in orientation. COPYRIGHT: (C)2008,JPO&INPIT
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