| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reducing an on voltage and an on resistance. SOLUTION: The semiconductor device 10 has an upper drift region 23 (a third semiconductor region) isolated from an n-type (a first conductivity type) emitter region 60 (a first semiconductor region) by a p-type (a second conductivity type) body region 50 (a second semiconductor region) and p-type floating semiconductor regions 22 formed on the lower section of the upper drift region 23 and placed in an electrically floated state. The semiconductor device 10 further has an n-type lower drift region 20 (a fourth semiconductor region) formed on the lower section of the p-type floating semiconductor regions 22 and made conductive with the upper drift region 23 and trenches 14 extended penetrating the body region 50 and the upper drift region 23 from the surface of an emitter region 60 and projecting their bases 141 to the lower drift region 20. The semiconductor device 10 further has trench gate electrodes 13 housed in the trenches 14 under the state surrounded by insulating layers 12 coating the internal surfaces of the trenches 14. COPYRIGHT: (C)2008,JPO&INPIT
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