| 摘要 |
A semiconductor memory device includes a memory cell array, bit lines, a source line, a sense amplifier, a data buffer, a voltage generating circuit, and a control circuit, the control circuit being configured such that the control circuit writes batchwise the write data, in the plurality of memory cells of the bit lines, the control circuit, after the batchwise write, causes the plurality of first latch circuits to hold the write data once again, and the control circuit executes verify read from the memory cells, and executes, in a case where read data of the plurality of sense amplifier circuits by the verify read disagree with the write data that are held once again in the plurality of first latch circuits, additional write to write batchwise the held write data in the plurality of memory cells once again.
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