发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT
摘要 An object of the invention is to provide a reference voltage generation circuit relatively unaffected by ambient temperature, capable of supplying reference voltage equal to or less than the bandgap voltage of silicon. The reference voltage generation circuit includes: a current generation circuit which generates current; and a current-voltage conversion circuit which converts the current generated by said current generation circuit into voltage to generate reference voltage. The current generation circuit generates current which varies in value according to ambient temperature of the current generation circuit. The current-voltage conversion circuit includes two resistors, in which the current generated by the said current generation circuit flows, and which perform voltage conversion. One of the resistors has a positive temperature coefficient and the other has a negative temperature coefficient.
申请公布号 US2008180070(A1) 申请公布日期 2008.07.31
申请号 US20070867332 申请日期 2007.10.04
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KUSHIMA TAKAHITO;KOJIMA TOMOKAZU
分类号 G05F3/00 主分类号 G05F3/00
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