| 摘要 |
This invention efficiently suppresses the power noise of an LSI. A semiconductor device includes first and second interconnection layers. The first interconnection layer has a source voltage supply line of a first potential positioned to extend along logic cells in a first direction. The second interconnection layer lies on an upper layer than the first interconnection layer and has plural source voltage supply lines of a second potential arranged adjacent to each other to form a group and positioned to extend in a second direction which is different from the first direction of interconnection. An interconnection line of the second potential is positioned on an upper layer than the first interconnection layer and interconnects at least two of the plurality of source voltage supply lines of the second potential. The interconnection line of the second potential is positioned to overlap the source voltage supply line of the first potential, to form a capacitor with the source voltage supply line of the first potential. |
